PART |
Description |
Maker |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT |
High speed 1 Megabit monolithic FLASH. Speed 150ns. High speed 1 Megabit monolithic FLASH. Speed 90ns. High speed 1 Megabit monolithic FLASH. Speed 70ns. ACT-F128K8 High Speed 1 Megabit Monolithic FLASH High speed 1 Megabit monolithic FLASH. Speed 60ns. High speed 1 Megabit monolithic FLASH. Speed 120ns.
|
AEROFLEX[Aeroflex Circuit Technology]
|
RD2003JN |
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode
|
Sanyo Semicon Device
|
DCA010 |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE Very High-Speed Switching Diode From old datasheet system
|
SANYO SEMICONDUCTOR CO LTD SANYO[Sanyo Semicon Device]
|
PACDN005SR PACDN005S/T PACDN005ST PACDN005QT PACDN |
APPLICATION SPECIFIC DIODE ARRAY|SO P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR
|
California Micro Devices Co... California Micro Devices Corporation
|
BGX50A Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器,高速开 Silicon Schottky Barrier Diode for Various Detector High Speed Switching Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
HV200F04 HV200F042CL2FD |
High speed switching 4.0kV 200mA HIGH VOLTAGE DIODE
|
getedz electronics GETAI ELECTRONICS DEVIC...
|
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage High Speed Switching Applications
|
TOSHIBA
|